Publicaciones 2011-2020

@article{RN398,
title = {Electrical and Optical Properties of P-Type Ag(0.3)Cu(0.7)Inq(2) Chalcopyrite Semiconductors},
author = { S. Moris and V. Manriquez and P. Barahona and A. Gald\'{a}mez and P. Valencia-Galvez},
url = {/brokenurl#<Go to ISI>://WOS:000452412600004},
issn = {1584-8663},
year = {2018},
date = {2018-01-01},
journal = {Chalcogenide Letters},
volume = {15},
number = {12},
pages = {615-623},
abstract = {We report the synthesis, characterization and electrical properties of Ag0.3Cu0.7InS2, Ag0.3Cu0.7InSe2 and Ag0.3Cu0.7InTe2. These solid solutions were synthesized via microwave-assisted solid-state reactions. Powder X-ray diffraction patterns were indexed in the space group I (4) over bar 2d. The chemical compositions were determined by scanning electron microcopy. The analysis of the vibrational properties was performed by Raman scattering measurements. The Raman peaks were analyzed by fitting the spectra and allowed the identification of the vibrational modes via comparison with experimental and theoretical data from CuInQ(2) ( Q = S, Se, Te) end-members. Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2 exhibit typical semiconductor p-type behavior with a carrier concentration of similar to +10(16) cm(-3). The electrical conductivities sigma at R.T. were similar to 10(-1) S cm(-1) and similar to 1.0 S cm(-1) for Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2, respectively. The optical band gaps, based on the UV-Vis-NIR spectra, were E-g similar to 1.50 eV.},
keywords = {chalcopyrite-type, compound, cugase2 cuinse2, cuinte2, i-iii-vi2, p-type, selenization, semiconductor solar-cells, sulfurization, ternary, thin-films},
pubstate = {published},
tppubtype = {article}
}