Publicaciones 2011-2020

@article{RN398,
title = {Electrical and Optical Properties of P-Type Ag(0.3)Cu(0.7)Inq(2) Chalcopyrite Semiconductors},
author = { S. Moris and V. Manriquez and P. Barahona and A. Gald\'{a}mez and P. Valencia-Galvez},
url = {/brokenurl#<Go to ISI>://WOS:000452412600004},
issn = {1584-8663},
year = {2018},
date = {2018-01-01},
journal = {Chalcogenide Letters},
volume = {15},
number = {12},
pages = {615-623},
abstract = {We report the synthesis, characterization and electrical properties of Ag0.3Cu0.7InS2, Ag0.3Cu0.7InSe2 and Ag0.3Cu0.7InTe2. These solid solutions were synthesized via microwave-assisted solid-state reactions. Powder X-ray diffraction patterns were indexed in the space group I (4) over bar 2d. The chemical compositions were determined by scanning electron microcopy. The analysis of the vibrational properties was performed by Raman scattering measurements. The Raman peaks were analyzed by fitting the spectra and allowed the identification of the vibrational modes via comparison with experimental and theoretical data from CuInQ(2) ( Q = S, Se, Te) end-members. Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2 exhibit typical semiconductor p-type behavior with a carrier concentration of similar to +10(16) cm(-3). The electrical conductivities sigma at R.T. were similar to 10(-1) S cm(-1) and similar to 1.0 S cm(-1) for Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2, respectively. The optical band gaps, based on the UV-Vis-NIR spectra, were E-g similar to 1.50 eV.},
keywords = {chalcopyrite-type, compound, cugase2 cuinse2, cuinte2, i-iii-vi2, p-type, selenization, semiconductor solar-cells, sulfurization, ternary, thin-films},
pubstate = {published},
tppubtype = {article}
}

@article{RN363,
title = {Effect of the Seed Layer on the Growth and Orientation of the Zno Nanowires: Consequence on Structural Optical Properties},
author = { A. Serrano and A. Arana and A. Gald\'{a}mez and A. Dutt and B.M. Monroy and F. Guell and G. Santana},
url = {/brokenurl#<Go to ISI>://WOS:000416184600065},
doi = {10.1016/j.vacuum.2017.03.010},
issn = {0042-207x},
year = {2017},
date = {2017-01-01},
journal = {Vacuum},
volume = {146},
pages = {509-516},
publisher = {2017 Elsevier Ltd.},
abstract = {High quality vertically aligned zinc oxide (ZnO) nanowires (NWs) were grown on Au-coated aluminum doped zinc oxide (AZO) thin films via vapor-liquid-solid (VLS) technique. AZO seed layers were deposited using two different techniques named as ultrasonic spray pyrolysis (USP) and magnetron sputtering. Structural, morphological and compositional properties of the NWs grown on the two distinct seed layers were analyzed in detail by using X-ray diffraction (XRD), scanning electronic microscopy (SEM) and energy dispersive spectroscopy (EDS) techniques, respectively. In the first case, (seed layer grown by USP technology), NWs showed the (101) orientation, whereas in the second case, (seed layer grown by sputtering) NWs showed (002) orientation. It was confirmed by the SEM images, that NWs with (002) orientation shown better vertical alignment than NWs with (101) orientation. In addition, optical properties were also studied using photoluminescence (PL) spectroscopy and irrespective of the preferred orientation, NWs showed a strong green emission at room temperature. The study made in the present work on the seed layer preparation by two techniques and hence, deposition conditions to achieve fully controllable ZnO nanowires with precise distance, shape, position and orientation could provide opportunities for the fabrication of future optoelectronic devices.},
keywords = {fabrication, layer, luminescence, nanostructures, networks, photoluminescence pressure properties, pyrolysis, seed spray sputtering, temperature, thin-films, ultrasonic zinc-oxide zno},
pubstate = {published},
tppubtype = {article}
}

@article{RN314,
title = {Effect of the Selenium Content in the Optical Properties of the Kesterite Cu2znsns4-Xsex Phases},
author = { F. Lopez-Vergara and A. Gald\'{a}mez and P. Barahona and V. Manriquez},
url = {/brokenurl#<Go to ISI>://WOS:000393079900028},
doi = {10.4067/S0717-97072016000400028},
issn = {0717-9707},
year = {2016},
date = {2016-01-01},
journal = {Journal of the Chilean Chemical Society},
volume = {61},
number = {4},
pages = {3291-3294},
abstract = {Polycrystalline Cu2ZnSnS4-XSeX (X=1, 2, 3) compounds were synthesized by conventional solid-state reactions. The samples were characterized by powder X-ray diffraction (XRD), energy-dispersive X-ray analysis (SEM-EDS), Raman spectroscopy, diffuse reflectance UV-vis and Photoluminescence. All of phases crystallize in the tetragonal kesterite-type structure. The powder X-ray diffraction (XRD) patterns were indexed in the space group vertical bar (4) over bar No secondary phases were detected in XRD patterns. The results from diffuse reflectance show band gap between 1.26 - 1.17 eV, when S is gradually replaced by Se. The PL spectrum of Cu2ZnSnS4- xSex phases shows nearly symmetrical band, which shifted linearly to the lower energy with increasing Se content. The selenized (CZTSSe) phases are promising candidates to be used as absorbing material in solar cells},
keywords = {crystal-structure, film photovoltaics solar-cells, solid-solutions, thin-films},
pubstate = {published},
tppubtype = {article}
}